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Aluminum nitride (AlN) Substrates
Aluminum nitride (AlN) Substrates
Aluminum nitride (AlN) Substrates
Aluminum nitride (AlN) Substrates

Aluminum nitride (AlN) Substrates

Innovacera’s Aluminum Nitride (AlN) Substrates deliver exceptional thermal conductivity, a thermal expansion coefficient closely matched to silicon, and excellent electrical insulation, making them an ideal choice for high-power electronic applications. With superior mechanical strength, high breakdown voltage, and outstanding thermal shock resistance, AlN substrates ensure reliable performance in demanding environments. Their precision machining capability and customizable specifications make them well-suited for IGBT power modules, high-power LEDs, and advanced heat dissipation components.

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Features

• High thermal conductivity (170~230W/m.K), up to 9.5 times than alumina;
• Thermal expansion coefficient close to silicon wafer, achieve high reliability of Silicon chip and thermal heat cycling;
• High electrical properties: high breakdown voltage, high electric insulation, and low dielectric constant;

Application

• IGBT power module;
• High-power LED package;
• High power heat sink, heat dissipation substrate;
Various metalized processing is available (Thin film metallization, Thick film metallization, Direct Bonded Cooper, Active Metal Brazing, Direct Plated Cooper, etc.)

Material Properties Table

Project Test conditions Unit AlN
AN-170 AN-200 AN-230
Material - - AlN AlN AlN
Appearance - - Light blue beige beige
Surface roughness Ra μm 0.2~0.75 0.2~0.75 0.2~0.75
Density - g/cm 3 ≥3.3
Physical properties Bending strength 3 -point bending resistance MPa ≥400 ≥350 ≥300
Vickers hardness Load 4.9 GPa ≥10
Water absorption - % -
Thermal performance Thermal conductivity 25℃ W/(m·k) ≥170 ≥200 ≥230
Linear thermal expansion coefficient 25-500℃ x10 -6 mm/℃ 4~6
Thermal shock resistance 800℃ Time ≥10
Specific heat - J/(kg·K) 720
Electrical properties Dielectric constant 1MHz/25℃ - 8~9
Dielectric loss 1MHz/25℃ x10 -4 ≤3
Volume resistivity 25℃ Ω·cm > 10 14
Breakdown voltage - kV/mm > 17
Light performance Reflectivity Reflectivity meter - -
Whiteness Whiteness meter - -

Specifications and Dimensions

Size(mm)

Thickness ( mm )

0.25 0.38 0.5 0.635 0.76 1.0 1.2 1.5 2.0
101.6*101.6
114.3*114.3
120*120
138*190

Processing

• Laser processing

Laser processing diagram

• Grinding and polishing sheet roughness table

Grinding and polishing sheet roughness table diagram

Project Qualified Special Grade
Internal dimension tolerance ±0.05mm ±0.03mm
External dimension tolerance ±0.15mm ±0.1mm
Hole tolerance (φ0.07-0.15mm) ±0.05mm ±0.02mm
Hole tolerance (φ > 0.15mm) ±0.1mm ±0.02mm
Project Surface roughness (μm )
Qualified Special Grade
Grinding 0.3-0.6 0.3-0.5
Fine grinding 0.1-0.4 0.1-0.3
Polishing ≤0.1 ≤0.05

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