INNOVACERA provides AlN ceramic substrate. AlN substrate is one of the most popular ceramic substrates which has excellent heat resistance, high mechanical strength, abrasion resistance, and small dielectric loss. The surface of the AlN substrate is quite smooth and has low porosity. Aluminum Nitride has higher thermal conductivity, compared to alumina substrate, It is about 7 to 8 times high. AlN substrate is an excellent electronic package material.
INNOVACERA provides AlN substrate for a wide range of applications, including thin film and thick film microelectronic, high power and high-frequency circuit RF/microwave components and capacitor or resistor, contact us for more ceramic wafer product information.
AlN Wafer Properties:
| Chemical formula | AlN |
| Color | Gray |
| Density | 3.3 g/cm3 |
| Thermal conductivity | 160 ~ 190 W/m.K |
| Thermal Expansion (x10 -6/°C) | 2-3.5 |
| Dielectric strength | ≥17KV/MM |
| Dielectric Constant (at 1MHZ) | 8-10 |
| Loss Tangent (x10 -4 @1MHZ) | 2.0 |
| Volume Resistivity | ≥10^14 ohm-cm |
AlN Wafer Properties:
| Diameter | Ø 16 / Ø 20 / Ø 30 / Ø40 / Ø 50 /Ø 60 / Ø 75 / Ø 80 |
| Square size | 2″x 2″ / 3″ x 3″ / 4″ x 4″ / 4.5″ x 4.5″ |
| Thickness | 0.385 mm / 0.5 mm /0.635mm/ 1 mm |
| Surface | As fired |
| one side polished / two sides polished | |
| Roughness | Ra 0.3-0.5 um |
