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Aluminum Nitride Wafer Substrates
Aluminum Nitride Wafer Substrates
6” Aluminum Nitride wafers
8“ Aluminum Nitride wafers
Aluminum Nitride Wafer Substrates

Aluminum Nitride Wafer Substrates

Innovacera standard aluminum nitride wafer diameters are from 50.8 mm (2 inch) to 200 mm (8 inch) ; mostly use are 6” aluminum nitride wafers and 8” AlN wafer substrates . AlN Wafers can be produced in various thicknesses from 0.125mm to 1mm with polished or lapped sides, customized sizes or request are also available.

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Aluminum Nitride (AIN) materials play a important roles in the semiconductor industry, the similarities between its thermal profile and that of silicon has made an ideal choice for wafer-related semiconductor applications. Innovacera’s Aluminum nitride wafers have high reliability of Si chip and thermal heat cycling. According to direct wafer bonding technology, polished semiconductor wafers can be bonded together without adhesives. Direct wafer bonding requires very flat and high smooth surface (Ra≤0.05um), Innovacera AlN wafers substrate can meet this requirements. Features
  • High melting point
  • High electrical insulation
  • Lowdielectric constant
  • Higher mechanical strength
  • Superior corrosion resistance against molten metal
  • Thermal and chemicalstability
  • High thermal conductivity (170-220w/mk)
  • Similar coefficient of thermal expansion to that of silicon (si)
Properties
Properties Unit AN170 AN230 AN99 AN999
Color - Gray Beige Gray Beige
Content of ALN - ≥95% ≥96% ≥99% ≥99.9%
Bulk Density g/cm3 ≥3.30  ≥3.28 ≥3.26 ≥3.25
Flexural Strength MPa ≥400 ≥300 ≥300 ≥300
Compressive Strength MPa 2500 2000 2000 2000
Hv 500g Gpa 10.5 9.0 9.0 9.0
Young’s Modulus Gpa 300 300 280 280
Thermal Conductivity (@20°C) W/m·K ≥170 ≥220 ~100 ~90
Specific Heat KJ/(Kg·K) 0.74 0.73 0.73 0.73
C.T.E (r.t.-400°C) 10-6/K 4.6 4.6 4.6 4.6
Volume Resistivity Ω·cm 20°C ≥1014 ≥1013 ≥1010 ≥1010
Dielectric Strength KV/mm ≥16 ≥15 ≥15 ≥15
Dielectric Constant (@1MHz) - 8.6 8.6 8.6 8.6
Loss Tangent (@1MHz) ×10-4 5 5 5 5
AlN Wafers Specification
Properties Unit 6" Wafer 8" Wafer
Material - AlN Ceramics AlN Ceramics
Thermal Conductivity W/m·K >170 >170
Thermal Expansion Coefficient ppm/K（300~1200K） 4-6 4-6
Sintering Aid - Y2O3 Y2O3
Diameter mm 150+/-0.25 200+/-0.25
Notch Depth mm 1.0+0.25/-0/Locating Edge 1.0+0.25/-0
Notch Angle - 90°+5/-2° 90°+5/-2°
Thickness μm 400±15 400±15
TTV μm <10 <10
BOW μm <±30 <±30
Warp μm <50 <50
Ra nm <50 <50
Applications
  • Semiconductor manufacturing
  • Microwave power amplifier
  • Rf powerand switch
  • High temperature power electronics
  • Laser diode dispersionoptoelectronic devices
  • High power and high frequency electronic devices
  • MOSFET, IGBTpower modules
  • Led packages for cooling and protecting circuits

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